Photoluminescence excitation spectroscopy of GaP1 - XNx alloys: Conduction-band-edge formation by nitrogen incorporation

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 353-356

  Yaguchi, Hiroyuki ^a   Miyoshi, Seiro ^a   Biwa, Goshi ^a   Kibune, Masaya ^a   Onabe, Kentaro ^a   Shiraki, Yasuhiro ^b   Ito, Ryoichi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRONIC STRUCTURE; GALLIUM ALLOYS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE;

PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030680373     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00592-1     Document Type: Article

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