Composition dependence of energy structure and lattice structure in InGaAs/GaP

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 21, Issue 1, 2004, Pages 36-44

  Fuchi, Shingo ^a   Nonogaki, Youichi ^b   Moriya, Hiromitsu ^a   Koizumi, Atsushi ^a   Fujiwara, Yasufumi ^a   Takeda, Yoshikazu ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b INSTITUTE FOR MOLECULAR SCIENCE   (Japan)

Author keywords

Dislocation; Energy structure; GaP; InGaAs; Nanometer scale

Indexed keywords

COMPOSITION; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); ELECTRON ENERGY LEVELS; ENERGY GAP; HETEROJUNCTIONS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

DISLOCATION; ENERGY STRUCTURE; NANOMETER-SCALE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 1042275346     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.02.001     Document Type: Article

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