Control of N content of GaPN grown by molecular beam epitaxy and growth of GaPN lattice matched to Si(100) substrate

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 2 A, 2002, Pages 528-532

  Furukawa, Yuzo ^a,d   Yonezu, Hiroo ^b,d   Ojima, Kaoru ^b   Samonji, Katsuya ^c   Fujimoto, Yasuhiro ^c   Momose, Kenji ^a   Aiki, Kunio ^c  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

^c PANASONIC CORPORATION   (Japan)

^d AICHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

GaPN; Heteroepitaxy; Lattice matched layer; MBE; MEE; Si

Indexed keywords

CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; NITROGEN; SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

MIGRATION ENHANCED EPITAXY (MEE);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0036478572     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.528     Document Type: Article

References (13)