Growth characteristic and room-temperature lasing in GaInNAs quantum dots grown by solid-source molecular beam epitaxy

Journal of Crystal Growth

Volumn 263, Issue 1-4, 2004, Pages 99-104

  Sun, Z Z ^a   Yoon, S F ^a   Yew, K C ^a   Bo, B X ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

A3. Laser epitaxy; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials; B3. Laser diodes

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL LATTICES; CURRENT DENSITY; ELECTROLUMINESCENCE; ENERGY GAP; LASER BEAM EFFECTS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS; STRAIN; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

LASER EPITAXY; SEMICONDUCTING III-V MATERIALS; SOLID SOURCE MOLECULAR BEAM EPITAXY (SSMBE);

GALLIUM NITRIDE;

EID: 1242286500     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.11.078     Document Type: Article

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