Dislocation-free inxGa1-xP1-yNy/GaP 1-zNz double-heterostructure light emitting diode on Si substrate

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 A, 2005, Pages 1752-1755

  Moon, Soo Young ^a   Yonezu, Hiroo ^a   Furukawa, Yuzo ^a   Kim, Sung Man ^a   Morita, Yoshiro ^a   Wakahara, Akihiro ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Double heterostructure; InGaPN; Lattice matching; LED; MBE; Si

Indexed keywords

EPITAXIAL GROWTH; HEAT TREATMENT; HETEROJUNCTIONS; INTEGRATED OPTOELECTRONICS; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; NITROGEN; SILICON; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

DOUBLE HETEROSTRUCTURES; INGAPN; LATTICE MATCHING; SOLID-SOURCE MOLECULAR BEAM EPITAXY (SS-MBE);

INDIUM COMPOUNDS;

EID: 21244447623     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.1752     Document Type: Article

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