Elemental devices, circuits and processes for a monolithic Si/III-V-N alloy OEIC

Optical Materials

Volumn 27, Issue 5, 2005, Pages 799-803

  Yonezu, H ^a   Furukawa, Y ^a   Abe, H ^a   Yoshikawa, Y ^a   Moon, S Y ^a   Utsumi, A ^a   Yoshizumi, Y ^a   Wakahara, A ^a   Ohtani, M ^a,b  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b NARA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DOPING (ADDITIVES); EVAPORATORS; ION IMPLANTATION; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; MOSFET DEVICES; OXIDATION; SEMICONDUCTOR QUANTUM WELLS; SILICON ALLOYS; STACKING FAULTS; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

CRYSTALLINE QUALITY; DOUBLE HETEROSTRUCTURE (DH); GROWTH RATES; STRUCTURAL DEFECTS;

INTEGRATED OPTOELECTRONICS;

EID: 13444302676     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2004.08.002     Document Type: Conference Paper

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