Low temperature plasma enhanced chemical vapor deposition of thin films combining mechanical stiffness, electrical insulation, and homogeneity in microcavities

Journal of Applied Physics

Volumn 108, Issue 4, 2010, Pages

  Peter, S ^a   Gunther M ^a   Hauschild, D ^a   Richter, F ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITIVELY COUPLED RF DISCHARGE; CHEMICAL VAPOR; ECR PLASMA; ELECTRICAL INSULATION; HIGH VOLTAGE BIAS; HYDROGENATED AMORPHOUS CARBON (A-C:H); HYDROGENATED AMORPHOUS SILICON; INSULATING FILM; LOW TEMPERATURES; MECHANICAL STIFFNESS; MICROTRENCHES; MICROWAVE ELECTRON CYCLOTRON RESONANCE; PULSE PERIOD; PULSED BIASING; SUBMILLIMETERS; SUBSTRATE BIAS; SUBSTRATE TEMPERATURE; TRIMETHYLSILANE; UNIFORM COVERAGE; YOUNG'S MODULUS;

ACETYLENE; AMORPHOUS CARBON; AMORPHOUS FILMS; AMORPHOUS SILICON; ARGON; CARBON FILMS; CARBON NITRIDE; CYCLOTRONS; DEPOSITION; ELECTRIC DISCHARGES; ELECTRON CYCLOTRON RESONANCE; HYDROGENATION; MECHANICAL PROPERTIES; METHANE; MICROCAVITIES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; THICK FILMS;

PLASMA DEPOSITION;

EID: 77956306894     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3474989     Document Type: Conference Paper

References (53)

1. W. -G. Drossel, S. Hensel, B. Kranz, M. Nestler, and A. Goeschel CIRP Ann. CIRAAT 0007-8506 58, 279 (2009). 10.1016/j.cirp.2009.03.058
2. S. Peter, K. Graupner, D. Grambole, and F. Richter, J. Appl. Phys. JAPIAU 0021-8979 102, 053304 (2007). 10.1063/1.2777643
3. I. Blaszczyk-Lezak and A. M. Wrobel, Appl. Surf. Sci. ASUSEE 0169-4332 253, 7404 (2007). 10.1016/j.apsusc.2007.03.027
4. D. -H. Kuo and D. -G. Yang, Thin Solid Films THSFAP 0040-6090 374, 92 (2000). 10.1016/S0040-6090(00)01194-9
5. N. I. Fainer, M. L. Kosinova, Yu. M. Rumyantsev, E. A. Maximovskii, and F. A. Kuznetsov, J. Phys. Chem. Solids JPCSAW 0022-3697 69, 661 (2008). 10.1016/j.jpcs.2007.07.061
6. J. Robertson, Mater. Sci. Eng. R. MIGIEA 0927-796X 37, 129 (2002). 10.1016/S0927-796X(02)00005-0
7. B. Meyerson and F. W. Smith, J. Non-Cryst. Solids JNCSBJ 0022-3093 35-36, 435 (1980). 10.1016/0022-3093(80)90633-X
8. A. Grill, Thin Solid Films THSFAP 0040-6090 355-356, 189 (1999). 10.1016/S0040-6090(99)00516-7
9. R. L. C. Wu, H. Kosai, M. Freeman, G. E. Schwarze, S. Fries-Carr, and J. Weimer, Proceedings of the 25th International Power Modulator Symposium and High Voltage Work Shop, IEEE, 2002, p. 282.
10. X. Xiao, Y. Li, L. Song, X. Peng, and X. Hu, Appl. Surf. Sci. ASUSEE 0169-4332 156, 155 (2000). 10.1016/S0169-4332(99)00493-6
11. A. Nakao, M. Iwaki, H. Sakairi, and K. Terasima, Nucl. Instrum. Methods Phys. Res. B NIMBEU 0168-583X 65, 352 (1992). 10.1016/0168-583X(92)95065-Y
12. I. V. Afanasyev-Charkin and M. Nastasi, J. Appl. Phys. JAPIAU 0021-8979 96, 7681 (2004). 10.1063/1.1812587
13. S. Boughaba, G. I. Sproule, J. P. McCaffrey, M. Islam, and M. J. Graham, Thin Solid Films THSFAP 0040-6090 402, 99 (2002). 10.1016/S0040-6090(01)01673-X
14. M. Günthner, T. Kraus, A. Dierdorf, D. Decker, W. Krenkel, and G. Motz, J. Eur. Ceram. Soc. JECSER 0955-2219 29, 2061 (2009). 10.1016/j. jeurceramsoc.2008.11.013
15. G. Lavareda, C. Nunes de Carvalho, E. Fortunato, A. Amaral, and A. R. Ramos, J. Non-Cryst. Solids JNCSBJ 0022-3093 338-340, 797 (2004). 10.1016/j.jnoncrysol.2004.03.094
16. M. Vetter, I. Martn, A. Orpella, J. Puigdollers, C. Voz, and R. Alcubilla, Thin Solid Films THSFAP 0040-6090 451-452, 340 (2004). 10.1016/j.tsf.2003.10.125
17. J. -M. Shieh, K. -C. Tsai, and B. T. Dai, Appl. Phys. Lett. APPLAB 0003-6951 81, 1294 (2002). 10.1063/1.1500794
18. D. Probst, H. Hoche, Y. Zhou, R. Hauser, T. Stelzner, H. Scheerer, E. Broszeit, C. Berger, R. Riedel, H. Stafast, and E. Koke, Surf. Coat. Technol. SCTEEJ 0257-8972 200, 355 (2005). 10.1016/j.surfcoat.2005.02.111
19. M. J. Loboda, Microelectron. Eng. MIENEF 0167-9317 50, 15 (2000). 10.1016/S0167-9317(99)00259-2
20. N. Cherault, G. Carlotti, N. Casanova, P. Gergaud, C. Goldberg, O. Thomas, and M. Verdier, Microelectron. Eng. MIENEF 0167-9317 82, 368 (2005). 10.1016/j.mee.2005.07.018
21. N. Fainer, Y. Rumyantsev, M. Kosinova, E. Maximovski, V. Kesler, V. Kirienko, and F. Kuznetsov, Surf. Coat. Technol. SCTEEJ 0257-8972 201, 9269 (2007). 10.1016/j.surfcoat.2007.04.046
22. I. V. Afanasyev-Charkin and M. Nastasi, Surf. Coat. Technol. SCTEEJ 0257-8972 199, 38 (2005). 10.1016/j.surfcoat.2004.10.010
23. A. Anders, J. Phys. D: Appl. Phys. JPAPBE 0022-3727 40, 2272 (2007). 10.1088/0022-3727/40/8/S06
24. G. B. Raupp, T. S. Cale, and H. P. W. Hey, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10, 37 (1992). 10.1116/1.586361
25. A. Schubert and R. Pohl, wt Werkstattstechnik online 98, 855 (2008).
26. M. Finot, I. A. Blech, S. Suresh, and H. Fujimoto, J. Appl. Phys. JAPIAU 0021-8979 81, 3457 (1997). 10.1063/1.365042
27. G. C. A. M. Janssen, M. M. Abdalla, F. van Keulen, B. R. Pujada, and B. van Venrooy, Thin Solid Films THSFAP 0040-6090 517, 1858 (2009). 10.1016/j.tsf.2008.07.014
28. FILM DOCTOR: Software for the Evaluation of the Young's Field of Arbitrary Combinations of Normal and Tangential Loads, SIO/Germany.
29. X. L. Peng, Z. H. Barber, and T. W. Clyne, Surf. Coat. Technol. SCTEEJ 0257-8972 138, 23 (2001). 10.1016/S0257-8972(00)01139-7
30. M. Allon-Alaluf, L. Klibanov, A. Seidman, and N. Croitoru, Diamond Relat. Mater. DRMTE3 0925-9635 5, 1275 (1996). 10.1016/0925-9635(96)00549-3
31. E. Neyts, A. Bogaerts, and M. C. M van den Sanden, Appl. Phys. Lett. APPLAB 0003-6951 88, 141922 (2006). 10.1063/1.2193803
32. I. Kleps, F. Caccavale, G. Brusatin, A. Angelescu, and L. Armelao, Vacuum VACUAV 0042-207X 46, 979 (1995). 10.1016/0042-207X(95)00087-9
33. C. A. Mead, Phys. Rev. PHRVAO 0031-899X 128, 2088 (1962). 10.1103/PhysRev.128.2088
34. S. M. Sze, J. Appl. Phys. JAPIAU 0021-8979 38, 2951 (1967). 10.1063/1.1710030
35. M. A. Lieberman and A. J. Lichtenberg, Principles of Plasma Discharges and Materials Processing (Wiley, New York, 1994).
36. Handbook of Plasma Immersion Ion Implantation and Deposition, edited by, A. Anders, (John Wiley & Sons, New York, 2000).
37. S. Mändl, J. Brutscher, R. Günzel, and W. Möller, Nucl. Instrum. Methods Phys. Res. B NIMBEU 0168-583X 112, 252 (1996). 10.1016/0168-583X(95)01276-1
38. H. Ghomi, M. Sharifian, A. R. Niknam, and B. Shokri, J. Appl. Phys. JAPIAU 0021-8979 100, 113301 (2006). 10.1063/1.2400391
39. F. Le Cur, J. Pelletier, Y. Arnal, and A. Lacoste, Surf. Coat. Technol. SCTEEJ 0257-8972 125, 71 (2000). 10.1016/S0257-8972(99)00554-X
40. I. Dani, S. Peter, and F. Richter, Proceedings of the 14th International Symposium on Plasma Chemistry, Prag, 2-6 August 1999, Vol. III, p. 1275.
41. R. R. Reeber and K. Wang, Mater. Chem. Phys. MCHPDR 0254-0584 46, 259 (1996). 10.1016/S0254-0584(96)01808-1
42. K. Y. Li, Z. F. Zhou, I. Bello, C. S. Lee, and S. T. Lee, Wear WEARCJ 0043-1648 258, 1577 (2005). 10.1016/j.wear.2004.10.006
43. O. Durand-Drouhin, M. Lejeune, and M. Benlahsen, J. Appl. Phys. JAPIAU 0021-8979 91, 867 (2002). 10.1063/1.1423786
44. D. H. Zhang, Y. Gao, J. Wei, and Z. Q. Mo, Thin Solid Films THSFAP 0040-6090 377-378, 607 (2000). 10.1016/S0040-6090(00)01277-3
45. A. Bieder, V. Gondoin, Y. Leterrier, G. Tornare, P. Rudolf von Rohr, and J. -A. E. Manson, Thin Solid Films THSFAP 0040-6090 515, 5430 (2007). 10.1016/j.tsf.2006.12.176
46. P. Jedrzejowski, J. Cizek, A. Amassian, J. E. Klemberg-Sapieha, J. Vlcek, and L. Martinu, Thin Solid Films THSFAP 0040-6090 447-448, 201 (2004). 10.1016/S0040-6090(03)01057-5
47. L. C. Chen, H. Y. Lin, C. S. Wong, K. H. Chen, S. T. Lin, Y. C. Yu, C. W. Wang, E. K. Lin, and K. C. Ling, Diamond Relat. Mater. DRMTE3 0925-9635 8, 618 (1999). 10.1016/S0925-9635(98)00281-7
48. F. J. Gómez, P. Prieto, E. Elizalde, and J. Piqueras, Appl. Phys. Lett. APPLAB 0003-6951 69, 773 (1996). 10.1063/1.117887
49. Manual WVASE32, J.A. Woollam Co., Inc.
50. K. Maex, M. R. Baklanov, D. Shamiryan, F. Iacopi, S. H. Brongersma, and Z. S. Yanovitskaya, J. Appl. Phys. JAPIAU 0021-8979 93, 8793 (2003). 10.1063/1.1567460
51. J. Artbauer, J. Phys. D: Appl. Phys. JPAPBE 0022-3727 29, 446 (1996). 10.1088/0022-3727/29/2/024
52. X. D. Yang, T. Saito, Y. Nakamura, Y. Kondo, and N. Ohtake, Diamond Relat. Mater. DRMTE3 0925-9635 13, 1984 (2004). 10.1016/j.diamond.2004.06.036
53. Y. Oka, Y. Nishimura, and M. Yatzuzuka, Vacuum VACUAV 0042-207X 73, 541 (2004). 10.1016/j.vacuum.2003.12.085