Low hydrogen content in trimethylsilane-based dielectric barriers deposited by inductively coupled plasma

Applied Physics Letters

Volumn 81, Issue 7, 2002, Pages 1294-1296

  Shieh, Jia Min ^a   Tsai, Kou Chiang ^a   Dai, Bau Tong ^a  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION METHODS; DIELECTRIC BARRIER; HIGH BREAKDOWN FIELDS; HIGH HARDNESS; HIGH-IONIZATION; HYDROGEN CONTENTS; LOW STRESS; LOW-LEAKAGE CURRENT; METALIZATIONS;

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; HYDROGEN; PLASMA DEPOSITION; SILICON CARBIDE;

INDUCTIVELY COUPLED PLASMA;

EID: 79956053162     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1500794     Document Type: Article

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