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Volumn 46, Issue 2-3, 1996, Pages 259-264

Thermal expansion and lattice parameters of group IV semiconductors

Author keywords

Defects; Germanium; Lattice parameters; Silicon; Thermal expansion

Indexed keywords

CRYSTAL DEFECTS; EPITAXIAL GROWTH; HIGH TEMPERATURE EFFECTS; LATTICE CONSTANTS; MATHEMATICAL MODELS; MATHEMATICAL TECHNIQUES; RESIDUAL STRESSES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; THERMAL EXPANSION; THERMODYNAMIC PROPERTIES;

EID: 0030284096     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(96)01808-1     Document Type: Article
Times cited : (152)

References (25)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.