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Volumn 46, Issue 2-3, 1996, Pages 259-264
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Thermal expansion and lattice parameters of group IV semiconductors
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Author keywords
Defects; Germanium; Lattice parameters; Silicon; Thermal expansion
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Indexed keywords
CRYSTAL DEFECTS;
EPITAXIAL GROWTH;
HIGH TEMPERATURE EFFECTS;
LATTICE CONSTANTS;
MATHEMATICAL MODELS;
MATHEMATICAL TECHNIQUES;
RESIDUAL STRESSES;
SEMICONDUCTING GERMANIUM;
SEMICONDUCTING SILICON;
THERMAL EXPANSION;
THERMODYNAMIC PROPERTIES;
EINSTEIN TERMS;
SEMIEMPIRICAL QUASIHARMONIC MODEL;
SEMICONDUCTOR MATERIALS;
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EID: 0030284096
PISSN: 02540584
EISSN: None
Source Type: Journal
DOI: 10.1016/S0254-0584(96)01808-1 Document Type: Article |
Times cited : (152)
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References (25)
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