Ellipsometric study of carbon nitride thin films with and without silicon addition

Diamond and Related Materials

Volumn 8, Issue 2-5, 1999, Pages 618-622

  Chen, L C ^a   Lin, H Y ^b   Wong, C S ^c   Chen, K H ^d   Lin, S T ^c   Yu, Y C ^e   Wang, C W ^e   Lin, E K ^e   Ling, K C ^f  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b Department of Physics   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^d INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

^e ACADEMIA SINICA   (Taiwan)

^f FU JEN CATHOLIC UNIVERSITY   (Taiwan)

Author keywords

Carbon nitride; Ellipsometry; Raman; RBS

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL BONDS; ELLIPSOMETRY; LIGHT POLARIZATION; MAGNETRON SPUTTERING; MOLECULAR STRUCTURE; REFRACTIVE INDEX; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

CARBON NITRIDE;

NITRIDES;

EID: 0032614256     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(98)00281-7     Document Type: Article

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