Low-k dielectrics on base of silicon carbon nitride films

Surface and Coatings Technology

Volumn 201, Issue 22-23 SPEC. ISS., 2007, Pages 9269-9274

  Fainer, Nadezhda ^a   Rumyantsev, Yuri ^a   Kosinova, Marina ^a   Maximovski, Eugeni ^a   Kesler, Valeri ^b   Kirienko, Victor ^b   Kuznetsov, Fedor ^a  

^a NIKOLAEV INSTITUTE OF INORGANIC CHEMISTRY   (Russian Federation)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Electrophysical characteristics; Low k dielectrics; Optical properties; PECVD; Silicon carbonitride films

Indexed keywords

DIELECTRIC MATERIALS; ENERGY GAP; MECHANICAL PROPERTIES; MICROHARDNESS; OPTICAL PROPERTIES; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON COMPOUNDS;

LOW TEMPERATURE FILMS; LOW-K DIELECTRICS; SILICON CARBONITRIDE FILMS;

THIN FILMS;

DIELECTRIC MATERIALS; ENERGY GAP; MECHANICAL PROPERTIES; MICROHARDNESS; OPTICAL PROPERTIES; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON COMPOUNDS; THIN FILMS;

EID: 34547799643     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2007.04.046     Document Type: Article

References (13)

1. Boughaba S., Sproule G.I., McCaffrey J.P., et al. Thin Solid Films 402 (2002) 99
2. Afanasyev-Charkin I.V., and Nastasi M. NIM B 206 (2003) 736
3. Bendeddouche A. J. Appl.Phys. 81 (1997) 6147
4. Badzian A. J. Am. Ceram. Soc. 85 (2002) 16
5. Fainer N.I., Kosinova M.L., Rumyantsev Yu.M., and Kuznetsov F.A. J. Phys., IV 9 (1999) 769
6. Fainer N.I., Rumyantsev Yu.M., Golubenko A.N., Kosinova M.L., and Kuznetsov F.A. J. Cryst. Growth 248C (2003) 175
7. Fainer N.I., Kosinova M.L., Rumyantsev Yu.M., et al. Glass Phys. Chem. 31 (2005) 427
8. Vassallo E., Cremona A., Ghezzi F., et al. Appl. Surf. Sci. 252 (2006) 7993
9. Wagner C.D., Davis L.E., Zeller M.V., et al. Surf. Interface Anal. 3 (1981) 211
10. Fainer N.I., Kosinova M.L., Rumyantsev Yu.M., et al. ECS Proc. Fifteenth European Conference on Chemical Vapor Deposition vol. 2005-09 (2005) 1074
11. Maex K., Baklanov M.R., Shamiryan D., et al. J. Appl. Phys. 93 (2003) 8794
12. Terman L.M. Solid State Electronics 5 (1962) 285
13. Nicollian E.H., and Brews J.R. MOS Physics and Technology (1982), Willey, New York