SCOPUS 정보 검색 플랫폼

Journal of Non-Crystalline Solids

Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 797-801

Properties of a-Si:H TFTs using silicon carbonitride as dielectric

(5) Lavareda, G a,b Nunes De Carvalho, C a,b Fortunato, E a Amaral, A b Ramos, A R c,d

a UNIVERSIDADE NOVA DE LISBOA (Portugal)

b INSTITUTO SUPERIOR TÉCNICO (Portugal)

c INSTITUTO TECNOLÓGICO E NUCLEAR (Portugal)

d CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; GATES (TRANSISTOR); LEAKAGE CURRENTS; PERMITTIVITY; SILICON COMPOUNDS; THRESHOLD VOLTAGE;

BULK RESISTIVITY; FIELD EFFECT MOBILITY; GATE DIELECTRICS; SILICON CARBONITRIDE;

THIN FILM TRANSISTORS;

EID: 2942558747 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2004.03.094 Document Type: Conference Paper

Times cited : (14)

References (14)

1
- 0036610427
- Lee S.W., Cho K.S., Choo B.K., Jang J. IEEE Electron. Dev. Lett. 23:2002;324.
- (2002) IEEE Electron. Dev. Lett. , vol.23 , pp. 324
- Lee, S.W.¹ Cho, K.S.² Choo, B.K.³ Jang, J.⁴

2
- 0003039923
- Ryu J.I., Choi Y.J., Woo I.K., Lim B.C., Jang J. J. Non-Cryst. Solids. 266:2000;1310.
- (2000) J. Non-cryst. Solids , vol.266 , pp. 1310
- Ryu, J.I.¹ Choi, Y.J.² Woo, I.K.³ Lim, B.C.⁴ Jang, J.⁵

3
- 0012796036
- Kleider J.P., Longeaud C., Dayoub F. Thin Solid Films. 337:1999;208.
- (1999) Thin Solid Films , vol.337 , pp. 208
- Kleider, J.P.¹ Longeaud, C.² Dayoub, F.³

4
- 0037416701
- Merticaru A.R., Mouthaan A.J., Kuper F.G. Thin Solid Films. 427:2003;60.
- (2003) Thin Solid Films , vol.427 , pp. 60
- Merticaru, A.R.¹ Mouthaan, A.J.² Kuper, F.G.³

5
- 2442632380
- Lavareda G., Fortunato E., Carvalho C.N., Carrapa R., Martins R. Proc. ISDRS. 1:1993;161.
- (1993) Proc. ISDRS , vol.1 , pp. 161
- Lavareda, G.¹ Fortunato, E.² Carvalho, C.N.³ Carrapa, R.⁴ Martins, R.⁵

6
- 0036141598
- Liu Y.P., Liew L.A., Luo R.L., An L.N., Dunn M.L., Bright V.M., Daily J.W., Raj R. Sensors Actuat. A. 95:2002;143.
- (2002) Sensors Actuat. A , vol.95 , pp. 143
- Liu, Y.P.¹ Liew, L.A.² Luo, R.L.³ An, L.N.⁴ Dunn, M.L.⁵ Bright, V.M.⁶ Daily, J.W.⁷ Raj, R.⁸

7
- 0035510578
- Marx G., Korner K.U., Heger P. Steel Res. 72:2001;518.
- (2001) Steel Res. , vol.72 , pp. 518
- Marx, G.¹ Korner, K.U.² Heger, P.³

8
- 0037960224
- Smirnova T.P., Badalian A.M., Yakovkina L.V., Kaichev V.V., Bukhtiyarov V.I., Shmakov A.N., Asanov I.P., Rachlin V.I., Fomina A.N. Thin Solid Films. 429:2003;144.
- (2003) Thin Solid Films , vol.429 , pp. 144
- Smirnova, T.P.¹ Badalian, A.M.² Yakovkina, L.V.³ Kaichev, V.V.⁴ Bukhtiyarov, V.I.⁵ Shmakov, A.N.⁶ Asanov, I.P.⁷ Rachlin, V.I.⁸ Fomina, A.N.⁹

9
- 0035448843
- Chang H.L., Kuo C.T. Diam. Relat. Mater. 10:2001;1910.
- (2001) Diam. Relat. Mater. , vol.10 , pp. 1910
- Chang, H.L.¹ Kuo, C.T.²

10
- 0036504080
- Ting S.F., Fang Y.K., Hsieh W.T., Tsair Y.S., Chang C.N., Lin C.S., Hsieh M.C., Chiang H.C., Ho J.J. IEEE Electron. Dev. Lett. 23:2002;142.
- (2002) IEEE Electron. Dev. Lett. , vol.23 , pp. 142
- Ting, S.F.¹ Fang, Y.K.² Hsieh, W.T.³ Tsair, Y.S.⁴ Chang, C.N.⁵ Lin, C.S.⁶ Hsieh, M.C.⁷ Chiang, H.C.⁸ Ho, J.J.⁹

11
- 0033729193
- Maeng S.L., Uchikoga S., Clough F.J., Tagliaferro A., Flewitt A.J., Robertson J., Milne W.I. Diam. Relat. Mater. 9:2000;805.
- (2000) Diam. Relat. Mater. , vol.9 , pp. 805
- Maeng, S.L.¹ Uchikoga, S.² Clough, F.J.³ Tagliaferro, A.⁴ Flewitt, A.J.⁵ Robertson, J.⁶ Milne, W.I.⁷

12
- 0003602826
- Academic Press
- Ohring M. The Materials Science of Thin Films. 1992;Academic Press. p. 294.
- (1992) The Materials Science of Thin Films , pp. 194
- Ohring, M.¹

13
- 0036569833
- Ramos A.R., Paúl A., Rijniers L., da Silva M.F., Soares J.C. Nucl. Instr. and Meth. B. 190:2002;95.
- (2002) Nucl. Instr. and Meth. B , vol.190 , pp. 95
- Ramos, A.R.¹ Paúl, A.² Rijniers, L.³ Da Silva, M.F.⁴ Soares, J.C.⁵

14
- 0002679588
- Barradas N.P., Jeynes C., Webb R.P. Appl. Phys. Lett. 71:1997;291.
- (1997) Appl. Phys. Lett. , vol.71 , pp. 291
- Barradas, N.P.¹ Jeynes, C.² Webb, R.P.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.