Carrier transport in strained N-channel field effect transistors with channel proximate silicon-carbon source/drain stressors

Applied Physics Letters

Volumn 97, Issue 3, 2010, Pages

  Koh, Shao Ming ^a   Samudra, Ganesh S ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC EFFICIENCY; CARRIER INJECTION; CARRIER SCATTERING; CARRIER TRANSPORT CHARACTERISTICS; CLOSE PROXIMITY; DRIVE CURRENTS; GATE LENGTH; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; MOBILITY ENHANCEMENT; N-CHANNEL; PARASITIC RESISTANCES; SILICON-CARBON SOURCE/DRAIN STRESSORS; TRANSPORT PARAMETERS;

CARRIER TRANSPORT; SEMICONDUCTING SILICON; TENSILE STRAIN;

FIELD EFFECT TRANSISTORS;

EID: 77956195818     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3465661     Document Type: Article

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