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Volumn 95, Issue 7, 2009, Pages

Strain mapping of tensiley strained silicon transistors with embedded Si1-y Cy source and drain by dark-field holography

(5) Hüe, Florian a,b,c,d Htch, Martin a,b Houdellier, Florent a,b Bender, Hugo b Claverie, Alain a,b

a UNIVERSITÉ DE TOULOUSE (France)

b UNIVERSITÉ PAUL SABATIER (France)

c IMEC (Belgium)

d UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL REGION; CHANNEL WIDTHS; DARK-FIELD; GATE OXIDE; LONGITUDINAL TENSILE; NANO SCALE; SOURCE AND DRAINS; STRAIN DISTRIBUTIONS; STRAIN MAPPING; STRAIN MAPS; STRAINED-SILICON;

ELECTRON MOBILITY; HOLOGRAPHIC INTERFEROMETRY; HOLOGRAPHY; TRANSMISSION ELECTRON MICROSCOPY;

TENSILE STRAIN;

EID: 69249195799 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3192356 Document Type: Article

Times cited : (49)

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