Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors

IEEE Electron Device Letters

Volumn 29, Issue 1, 2008, Pages 80-82

  Liow, Tsung Yang ^a,b   Tan, Kian Ming ^a   Lee, Rinus T P ^a   Zhu, Ming ^a   Hoe, Keat Mun ^b   Samudra, Ganesh S ^a   Balasubramanian, N ^b   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

FinFET; Multiple gate transistor (MuGFET); Silicon carbon; Spacerless; Strain; Stress

Indexed keywords

SEMICONDUCTING SILICON COMPOUNDS; TENSILE STRESS;

DRAIN STRESSORS; MULTIPLE-GATE TRANSISTOR; SILICON-CARBON SOURCE; SPACER REMOVAL;

GATES (TRANSISTOR);

EID: 37649009997     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.910779     Document Type: Article

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