Carbon incorporation into substitutional silicon site by molecular carbon ion implantation and recrystallization annealing as stress technique in n-metal-oxide-semiconductor field-effect transistor

Japanese Journal of Applied Physics

Volumn 49, Issue 4 PART 2, 2010, Pages

  Itokawa, Hiroshi ^a   Miyano, Kiyotaka ^a   Oshima, Yasunori ^a   Mizushima, Ichiro ^a   Suguro, Kyoichi ^a  

^a SoC Research and Development Center   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SI; ANNEALING TECHNIQUES; C INCORPORATION; CARBON CONCENTRATIONS; CARBON INCORPORATION; COVALENT RADII; CRYSTALLINITIES; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOLECULAR CARBONS; NMOSFETS; NON-MELT LASER ANNEALING; RECRYSTALLIZATION-ANNEALING; RECRYSTALLIZATIONS; SOLID PHASE EPITAXY; SOURCE AND DRAINS; SPIKE ANNEALING; STRAINED-SI:C;

AMORPHOUS FILMS; AMORPHOUS SILICON; ANNEALING; CARBON FILMS; CRYSTAL GROWTH; DIELECTRIC DEVICES; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; ION IMPLANTATION; METAL ANALYSIS; MOSFET DEVICES; RECRYSTALLIZATION (METALLURGY); SEMICONDUCTOR LASERS;

SEMICONDUCTING SILICON;

EID: 77952695110     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.04DA05     Document Type: Article

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