Source/drain engineering for MOSFETs with embedded-Si:C technology

Applied Surface Science

Volumn 254, Issue 19, 2008, Pages 6135-6139

  Itokawa, Hiroshi ^a   Yasutake, Nobuaki ^a   Kusunoki, Naoki ^a   Okamoto, Shintaro ^a   Aoki, Nobutoshi ^a   Mizushima, Ichiro ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Carbon; MOSFET; Silicon; Strain

Indexed keywords

CARBON; CARRIER CONCENTRATION; CHEMICAL ACTIVATION; DRAIN CURRENT; ELECTRIC RESISTANCE; SEMICONDUCTOR DOPING; SILICON; SILICON ALLOYS; STRAIN;

ACTIVATION CHARACTERISTICS; CARBON CONCENTRATIONS; MOS-FET; SERIES RESISTANCES; SILICON CARBON ALLOYS; SOLID PHASE REACTION; SOURCE AND DRAINS; SOURCE/DRAIN ENGINEERING;

MOSFET DEVICES;

EID: 45049087160     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.02.176     Document Type: Article

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