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Volumn 54, Issue 10, 2010, Pages 1155-1159

Effects of fin width on memory windows in FinFET ZRAMs

Author keywords

Band to band tunneling; Capacitor less DRAM; FinFETs; Floating body effects; Gate induced drain leakage (GIDL); SOI; ZRAM

Indexed keywords

BAND TO BAND TUNNELING; CAPACITOR-LESS; FINFETS; FLOATING BODY EFFECT; GATE-INDUCED DRAIN LEAKAGE;

EID: 77955427937     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.05.012     Document Type: Article
Times cited : (8)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.