Generation of metastable electron traps in the near interfacial region of SOI buried oxides by ion implantation and their effect on device properties

Microelectronic Engineering

Volumn 72, Issue 1-4, 2004, Pages 362-366

  Schwank, J R ^a   Fleetwood, D M ^b   Xiong, H D ^b   Shaneyfelt, M R ^a   Draper, B L ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b VANDERBILT UNIVERSITY   (United States)

Author keywords

Buried oxides; Hardening; Radiation effects; Silicon on insulator; SOI

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; INTERFACES (MATERIALS); ION IMPLANTATION; OXIDES; RADIATION EFFECTS; STABILITY; THERMAL EFFECTS; THRESHOLD VOLTAGE;

BURIED OXIDES; IMPLANT ENERGIES;

SILICON ON INSULATOR TECHNOLOGY;

EID: 1642634148     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.01.032     Document Type: Conference Paper

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