Band-to-Band Tunneling (BBT) induced leakage current enhancement in irradiated fully depleted SOI devices

IEEE Transactions on Nuclear Science

Volumn 54, Issue 6, 2007, Pages 2174-2180

  Adell, Philippe C ^a,b   Barnaby, Hugh J ^a,c   Schrimpf, Ron D ^a,d   Vermeire, Bert ^a,c  

^a IEEE   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^c ARIZONA STATE UNIVERSITY   (United States)

^d VANDERBILT UNIVERSITY   (United States)

Author keywords

Band to band tunneling; Fully depleted SOI; GIDL; High current regime; Total ionizing dose

Indexed keywords

BAND-TO-BAND TUNNELING; HIGH CURRENT REGIME; TOTAL IONIZING DOSE;

DRAIN CURRENT; IONIZATION; IRRADIATION; LEAKAGE CURRENTS; SILICON ON INSULATOR TECHNOLOGY;

ELECTRON TUNNELING;

EID: 37249028695     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.911419     Document Type: Conference Paper

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