Gate-induced drain-leakage (GIDL) programming method for soft-programming-free operation in unified RAM (URAM)

IEEE Electron Device Letters

Volumn 30, Issue 2, 2009, Pages 189-191

  Han, Jin Woo ^a   Ryu, Seong Wan ^a   Choi, Sung Ji ^a   Choi, Yang Kyu ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

1T DRAM; Disturbance; FinFET; Gate induced drain leakage (GIDL); Nonvolatile memory (NVM); Soft program; SONOS; Unified RAM (URAM)

Indexed keywords

1T-DRAM; DISTURBANCE; FINFET; GATE-INDUCED DRAIN LEAKAGE (GIDL); NONVOLATILE MEMORY (NVM); SOFT PROGRAM; SONOS; UNIFIED RAM (URAM);

CHARGE TRAPPING; DYNAMIC RANDOM ACCESS STORAGE; FIELD EFFECT TRANSISTORS; IMPACT IONIZATION; PROGRAMMING THEORY; RANDOM ACCESS STORAGE;

DATA STORAGE EQUIPMENT;

EID: 59649117424     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2010345     Document Type: Article

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