Autonomous refresh of floating-body cell due to current anomaly of impact ionization

IEEE Transactions on Electron Devices

Volumn 56, Issue 10, 2009, Pages 2302-2311

  Ohsawa, Takashi ^a   Fukuda, Ryo ^a   Higashi, Tomoki ^b   Fujita, Katsuyuki ^a   Matsuoka, Fumiyoshi ^a   Shino, Tomoaki ^a   Furuhashi, Hironobu ^a   Minami, Yoshihiro ^a   Nakajima, Hiroomi ^a   Hamamoto, Takeshi ^a   Watanabe, Yohji ^a   Nitayama, Akihiro ^a   Furuyama, Tohru ^a  

^a TOSHIBA CORPORATION   (Japan)

^b KIOXIA CORPORATION   (Japan)

Author keywords

Autonomous refresh; Capacitorless 1T DRAM; Charge pumping; Data retention current; Floating body cell (FBC); Gate direct tunneling; Impact ionization; SRAM

Indexed keywords

AUTONOMOUS REFRESH; CAPACITORLESS 1T-DRAM; CHARGE PUMPING; DATA RETENTION CURRENT; FLOATING-BODY CELL (FBC); GATE DIRECT TUNNELING; SRAM;

CELL MEMBRANES; DYNAMIC RANDOM ACCESS STORAGE; FEEDBACK; PUMPS; STATIC RANDOM ACCESS STORAGE; TUNNELING (EXCAVATION); WIND TUNNELS;

IMPACT IONIZATION;

EID: 70350043570     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2028396     Document Type: Article

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