Research on metastable electron traps in the modified SOI materials induced by Si ion implantation

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 26, Issue 2, 2008, Pages

  Zhang, Enxia ^a,b   Yu, Zhishui ^a,b   Cao, Yanggen ^a,b   Yang, Hui ^b   Zhang, Zhengxuan ^b   Wang, Xi ^b  

^a SHANGHAI UNIVERSITY OF ENGINEERING SCIENCE   (China)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRAPS; GATE DIELECTRICS; ION IMPLANTATION; PARAMAGNETIC RESONANCE; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRICAL PERFORMANCE; GATE VOLTAGE; METASTABLE ELECTRON TRAPS; PSEUDO-METAL-OXIDE-SEMICONDUCTOR;

SILICON ON INSULATOR TECHNOLOGY;

EID: 40249085954     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2839858     Document Type: Article

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