Gate-induced floating-body effect (GIFBE) in fully depleted triple-gate n-MOSFETs

Solid-State Electronics

Volumn 53, Issue 2, 2009, Pages 150-153

  Na, K I ^a,b   Cristoloveanu, S ^b   Bae, Y H ^c   Patruno, P ^d   Xiong, W ^e   Lee, J H ^a  

^a Kyungpook National University   (South Korea)

^b IMEP LAHC   (France)

^c Uiduk University   (South Korea)

^d PARC TECHNOLOGIQUE DES FONTAINES   (France)

^e TEXAS INSTRUMENTS   (United States)

Author keywords

Back gate bias; Coupling effect; Gate induced floating body effect (GIFBE); Silicon on insulator (SOI); Triple gate MOSFET

Indexed keywords

ELECTRON TUNNELING; FINITE DIFFERENCE METHOD; FINS (HEAT EXCHANGE); MICROSENSORS; SEMICONDUCTING SILICON COMPOUNDS;

BACK-GATE BIAS; COUPLING EFFECT; GATE-INDUCED FLOATING-BODY EFFECT (GIFBE); SILICON-ON-INSULATOR (SOI); TRIPLE-GATE MOSFET;

MOSFET DEVICES;

EID: 58749108629     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.10.016     Document Type: Article

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