Impact of fin width on digital and analog performances of n-FinFETs

Solid-State Electronics

Volumn 51, Issue 4 SPEC. ISS., 2007, Pages 551-559

  Subramanian, V ^a   Mercha, A ^a   Parvais, B ^a   Loo, J ^a   Gustin, C ^a   Dehan, M ^a   Collaert, N ^a   Jurczak, M ^a   Groeseneken, G ^a   Sansen, W ^a   Decoutere, S ^a  

^a IMEC   (Belgium)

Author keywords

Analog; Digital; Fin width; FinFET; MuGFET

Indexed keywords

COMPUTATIONAL GEOMETRY; DRAIN CURRENT; ELECTRIC RESISTANCE; PARAMETER ESTIMATION;

DRAIN RESISTANCE; INVERSION PARAMETERS; SUBTHRESHOLD SLOPE;

FIELD EFFECT TRANSISTORS;

EID: 34047259981     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.02.003     Document Type: Article

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