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Volumn 47, Issue 6 III, 2000, Pages 2189-2195

Hole and electron trapping in ion implanted thermal oxides and SIMOX

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTED THERMAL OXIDES; SEPARATION BY IMPLANTATION OF OXYGEN;

EID: 0034452329     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.903752     Document Type: Conference Paper
Times cited : (64)

References (23)
  • 6
    • 84858360253 scopus 로고
    • Ion implantation and ionizing radiation effects in thermal oxides
    • C. R. Helms and B. E. Deal, Eds. New York: Plenum
    • (1988) 2 Interface , pp. 519
    • Devine, R.A.B.1
  • 8
    • 0016993952 scopus 로고
    • Determination of insulator bulk trapped charge densities and centroids from photocurrent-voltage characteristics of MOS structures
    • (1976) J. Appl. Phys. , vol.47 , pp. 4073
    • DiMaria, D.J.1
  • 15
    • 36549096569 scopus 로고
    • Electron-spin-resonance study of radiation-induced paramagnetic defects in oxides grown on (100) silicon substrates
    • (1988) J. Appl. Phys. , vol.64 , pp. 3551
    • Kim, Y.Y.1    Lenahan, P.M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.