Electron and hole trapping in thermal oxides that have been ion implanted

Microelectronic Engineering

Volumn 59, Issue 1-4, 2001, Pages 285-289

  Mrstik, B J ^a   Hughes, H L ^a   McMarr, P J ^b   Gouker, P ^c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b SFA INC   (United States)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Electron traps; Hole traps; Ion implanted SiO2; Silicon nanocrystals

Indexed keywords

CAPACITANCE MEASUREMENT; CRYSTAL DEFECTS; ELECTRON TRAPS; HOLE TRAPS; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; PHOTOIONIZATION; VOLTAGE MEASUREMENT;

SILICON NANOCRYSTALS; THERMAL OXIDES;

SILICA;

EID: 0035498449     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00611-6     Document Type: Conference Paper

References (8)

1. 2
2. 2
3. 2 after ion implantation
4. Hole and electron trapping in ion implanted thermal oxides and SIMOX
5. Confinement phenomena in buried oxides of SIMOX structures as affected by processing
6. Optical properties of silicon nanoclusters fabricated by ion implantation
7. 2 layers on silicon
8. 2 layers on Si