A capacitorless 1T-DRAM technology using gate-induced drain-leakage (GIDL) current for low-power and high-speed embedded memory

IEEE Transactions on Electron Devices

Volumn 53, Issue 4, 2006, Pages 692-697

  Yoshida, Eiji ^a   Tanaka, Tetsu ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Dynamic random access memory (DRAM); Embedded memory; Floating body effect; Gate induced drain leakage (GIDL); Silicon on insulator (SOI)

Indexed keywords

EMBEDDED SYSTEMS; LEAKAGE CURRENTS; SILICON ON INSULATOR TECHNOLOGY; TRANSISTORS;

EMBEDDED MEMORY; FLOATING BODY EFFECT; GATE INDUCED DRAIN LEAKAGE (GIDL);

DYNAMIC RANDOM ACCESS STORAGE;

EID: 33645751666     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.870283     Document Type: Article

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