Segregation of In atoms at clean and hydrogen passivated InP(100) surfaces

Applied Surface Science

Volumn 104-105, Issue , 1996, Pages 169-175

  Stietz, F ^a   Allinger, Th ^a   Polyakov, V ^a   Woll, J ^a   Goldmann, A ^a   Erfurth, W ^b   Lapeyre, G J ^c   Schaefer, J A ^d  

^a UNIVERSITY OF KASSEL   (Germany)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^c MONTANA STATE UNIVERSITY   (United States)

^d ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; HYDROGEN; PASSIVATION; SEGREGATION (METALLOGRAPHY); SURFACE PHENOMENA;

DIMERS;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0030235749     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00140-7     Document Type: Article

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