-
1
-
-
31044455312
-
High dielectric constant gate oxides for metal oxide Si transistors
-
DOI 10.1088/0034-4885/69/2/R02, PII S0034488506721856
-
J. Robertson, Rep. Prog. Phys. 0034-4885 69, 327 (2006). 10.1088/0034-4885/69/2/R02 (Pubitemid 43121643)
-
(2006)
Reports on Progress in Physics
, vol.69
, Issue.2
, pp. 327-396
-
-
Robertson, J.1
-
3
-
-
0037320225
-
-
0021-8979,. 10.1063/1.1531818
-
T. Gougousi, M. J. Kelly, D. B. Terry, and G. N. Parsons J. Appl. Phys. 0021-8979 93, 1691 (2003). 10.1063/1.1531818
-
(2003)
J. Appl. Phys.
, vol.93
, pp. 1691
-
-
Gougousi, T.1
Kelly, M.J.2
Terry, D.B.3
Parsons, G.N.4
-
4
-
-
67650544390
-
-
1369-8001,. 10.1016/j.mss2009.06.001
-
S. -Y. Chang, M. -I. Jeong, S. V. J. Chandra, Y. -B. Lee, H. -B. Hong, V. R. Reddy, and C. -J. Choi, Mater. Sci. Semicond. Process. 1369-8001 11, 122 (2008). 10.1016/j.mssp.2009.06.001
-
(2008)
Mater. Sci. Semicond. Process.
, vol.11
, pp. 122
-
-
Chang, S.-Y.1
Jeong, M.-I.2
Chandra, S.V.J.3
Lee, Y.-B.4
Hong, H.-B.5
Reddy, V.R.6
Choi, C.-J.7
-
5
-
-
38049092974
-
-
0012-821X,. 10.1016/j.epsl.2007.10.036
-
T. Komabayashi, K. Hirose, E. Sugimura, N. Sata, Y. Ohishi, and L. S. Dubrovinsky, Earth Planet. Sci. Lett. 0012-821X 265, 515 (2008). 10.1016/j.epsl.2007.10.036
-
(2008)
Earth Planet. Sci. Lett.
, vol.265
, pp. 515
-
-
Komabayashi, T.1
Hirose, K.2
Sugimura, E.3
Sata, N.4
Ohishi, Y.5
Dubrovinsky, L.S.6
-
6
-
-
45149089900
-
-
0003-6951,. 10.1063/1.2944865
-
A. Posadas, F. J. Walker, C. H. Ahn, T. L. Goodrich, Z. Cai, and K. S. Ziemer, Appl. Phys. Lett. 0003-6951 92, 233511 (2008). 10.1063/1.2944865
-
(2008)
Appl. Phys. Lett.
, vol.92
, pp. 233511
-
-
Posadas, A.1
Walker, F.J.2
Ahn, C.H.3
Goodrich, T.L.4
Cai, Z.5
Ziemer, K.S.6
-
7
-
-
67349089889
-
-
0167-9317,. 10.1016/j.mee.2009.03.046
-
P. Casey, E. O'Connor, R. Long, B. Brennan, S. A. Krasnikov, D. O'Connell, P. K. Hurley, and G. Hughes, Microelectron. Eng. 0167-9317 86, 1711 (2009). 10.1016/j.mee.2009.03.046
-
(2009)
Microelectron. Eng.
, vol.86
, pp. 1711
-
-
Casey, P.1
O'Connor, E.2
Long, R.3
Brennan, B.4
Krasnikov, S.A.5
O'Connell, D.6
Hurley, P.K.7
Hughes, G.8
-
8
-
-
33646707862
-
Magnesium oxide as a candidate high- κ gate dielectric
-
DOI 10.1063/1.2191419
-
L. Yan, C. M. Lopez, R. P. Shrestha, E. A. Irene, A. A. Suvorova, and M. Saunders, Appl. Phys. Lett. 0003-6951 88, 142901 (2006). 10.1063/1.2191419 (Pubitemid 43731503)
-
(2006)
Applied Physics Letters
, vol.88
, Issue.14
, pp. 142901
-
-
Yan, L.1
Lopez, C.M.2
Shrestha, R.P.3
Irene, E.A.4
Suvorova, A.A.5
Saunders, M.6
-
9
-
-
0032641557
-
-
0040-6090,. 10.1016/S0040-6090(98)01524-7
-
J. -H. Boo, S. -B. Lee, K. -S. Yu, W. Koh, and Y. Kim, Thin Solid Films 0040-6090 341, 63 (1999). 10.1016/S0040-6090(98)01524-7
-
(1999)
Thin Solid Films
, vol.341
, pp. 63
-
-
Boo, J.-H.1
Lee, S.-B.2
Yu, K.-S.3
Koh, W.4
Kim, Y.5
-
10
-
-
70449526815
-
-
0955-2219,. 10.1016/j.jeurceramsoc.2009.06.015
-
J. -M. Cho, K. -H. Lee, C. Il Cheon, N. I. Choc, J. S. Kim, J. Eur. Ceram. Soc. 0955-2219 30, 481 (2010). 10.1016/j.jeurceramsoc.2009.06.015
-
(2010)
J. Eur. Ceram. Soc.
, vol.30
, pp. 481
-
-
Cho, J.-M.1
Lee, K.-H.2
Cheon, C.I.3
Choc, N.I.4
Kim, J.S.5
-
11
-
-
75749093447
-
-
0021-8979,. 10.1063/1.3265434
-
R. O'Connor, G. Hughes, and P. Casey, J. Appl. Phys. 0021-8979 107, 024501 (2010). 10.1063/1.3265434
-
(2010)
J. Appl. Phys.
, vol.107
, pp. 024501
-
-
O'Connor, R.1
Hughes, G.2
Casey, P.3
-
12
-
-
0032000563
-
-
0039-6028,. 10.1016/S0039-6028(98)80022-8
-
M. Brause, B. Braun, D. Ochs, W. Maw-Friedrichs, and V. Kempter, Surf. Sci. 0039-6028 398, 184 (1998). 10.1016/S0039-6028(98)80022-8
-
(1998)
Surf. Sci.
, vol.398
, pp. 184
-
-
Brause, M.1
Braun, B.2
Ochs, D.3
Maw-Friedrichs, W.4
Kempter, V.5
-
13
-
-
31644440047
-
2 on Si(100) by photoelectron emission microscopy
-
DOI 10.1063/1.2163984, 023519
-
M. C. Zeman, C. C. Fulton, G. Lucovsky, R. J. Nemanich, and W. -C. Yang, J. Appl. Phys. 0021-8979 99, 023519 (2006). 10.1063/1.2163984 (Pubitemid 43172379)
-
(2006)
Journal of Applied Physics
, vol.99
, Issue.2
, pp. 1-6
-
-
Zeman, M.C.1
Fulton, C.C.2
Lucovsky, G.3
Nemanich, R.J.4
Yang, W.-C.5
-
16
-
-
34547817612
-
A study of the temperature dependence of adsorption and silicidation kinetics at the Mg/Si(111) interface
-
DOI 10.1016/j.tsf.2007.02.041, PII S0040609007001976
-
K. N. Galkin, M. Kumar, Govind, S. M. Shivaprasad, V. V. Korobtsov, and N. G. Galkin, Thin Solid Films 0040-6090 515, 8192 (2007). 10.1016/j.tsf.2007. 02.041 (Pubitemid 47239037)
-
(2007)
Thin Solid Films
, vol.515
, Issue.22
, pp. 8192-8196
-
-
Galkin, K.N.1
Kumar, M.2
Govind3
Shivaprasad, S.M.4
Korobtsov, V.V.5
Galkin, N.G.6
-
17
-
-
0343795603
-
-
0022-3654,. 10.1021/j100023a033
-
M. R. J. van Buuren, F. Voermans, and H. van Kempen, J. Phys. Chem. 0022-3654 99, 9519 (1995). 10.1021/j100023a033
-
(1995)
J. Phys. Chem.
, vol.99
, pp. 9519
-
-
Van Buuren, M.R.J.1
Voermans, F.2
Van Kempen, H.3
-
18
-
-
0033640328
-
2Si thin films
-
DOI 10.1016/S0167-9317(99)00287-7
-
A. Vantomme, G. Langouche, J. E. Mahan, and J. P. Becker, Microelectron. Eng. 0167-9317 50, 237 (2000). 10.1016/S0167-9317(99)00287-7 (Pubitemid 32211820)
-
(2000)
Microelectronic Engineering
, vol.50
, Issue.1-4
, pp. 237-242
-
-
Vantomme, A.1
Langouche, G.2
Mahan, J.E.3
Becker, J.P.4
-
19
-
-
77951566914
-
-
0734-2101,. 10.1116/1.2720849
-
S. Y. Chiam, W. K. Chim, A. C. H. Huan, J. Zhang, and J. S. Pan, J. Vac. Sci. Technol. A 0734-2101 25, 500 (2007). 10.1116/1.2720849
-
(2007)
J. Vac. Sci. Technol. A
, vol.25
, pp. 500
-
-
Chiam, S.Y.1
Chim, W.K.2
Huan, A.C.H.3
Zhang, J.4
Pan, J.S.5
-
20
-
-
0037415866
-
-
0040-6090,. 10.1016/S0040-6090(02)01306-8
-
X. P. Punchaipetch, G. Pant, M. Quevedo-Lopez, H. Zhang, M. El-Bouanani, M. J. Kim, R. M. Wallace, and B. E. Gnade, Thin Solid Films 0040-6090 425, 68 (2003). 10.1016/S0040-6090(02)01306-8
-
(2003)
Thin Solid Films
, vol.425
, pp. 68
-
-
Punchaipetch, X.P.1
Pant, G.2
Quevedo-Lopez, M.3
Zhang, H.4
El-Bouanani, M.5
Kim, M.J.6
Wallace, R.M.7
Gnade, B.E.8
-
21
-
-
0035952884
-
-
0003-6951,. 10.1063/1.1357445
-
H. Ono and T. Katsumata, Appl. Phys. Lett. 0003-6951 78, 1832 (2001). 10.1063/1.1357445
-
(2001)
Appl. Phys. Lett.
, vol.78
, pp. 1832
-
-
Ono, H.1
Katsumata, T.2
-
22
-
-
0019553003
-
Diffusion marker experiments with rare-earth silicides and germanides: Relative mobilities of the two atom species
-
DOI 10.1063/1.329015
-
J. E. E. Baglin, F. M. d'Heurle, and C. S. Petersson, J. Appl. Phys. 0021-8979 52, 2841 (1981). 10.1063/1.329015 (Pubitemid 11417593)
-
(1981)
Journal of Applied Physics
, vol.52
, Issue.4
, pp. 2841-2846
-
-
Baglin, J.E.E.1
D'Heurle, F.M.2
Petersson, C.S.3
-
23
-
-
52949119905
-
-
0003-6951,. 10.1063/1.2991340
-
A. M. Sonnet, C. L. Hinkle, M. N. Jivani, R. A. Chapman, G. P. Pollack, R. M. Wallace, and E. M. Vogel, Appl. Phys. Lett. 0003-6951 93, 122109 (2008). 10.1063/1.2991340
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 122109
-
-
Sonnet, A.M.1
Hinkle, C.L.2
Jivani, M.N.3
Chapman, R.A.4
Pollack, G.P.5
Wallace, R.M.6
Vogel, E.M.7
-
24
-
-
34548050002
-
Growth of pinhole-free ytterbium silicide film by solid-state reaction on Si(001) with a thin amorphous Si interlayer
-
DOI 10.1063/1.2767375
-
Y. -L. Jiang, Q. Xie, C. Detavernier, R. L. V. Meirhaeghe, G. -P. Ru, X. -P. Qu, B. -Z. Li, and P. K. Chu, J. Appl. Phys. 0021-8979 102, 033508 (2007). 10.1063/1.2767375 (Pubitemid 47283436)
-
(2007)
Journal of Applied Physics
, vol.102
, Issue.3
, pp. 033508
-
-
Jiang, Y.-L.1
Xie, Q.2
Detavernier, C.3
Van Meirhaeghe, R.L.4
Ru, G.-P.5
Qu, X.-P.6
Li, B.-Z.7
Chu, P.K.8
-
25
-
-
0348223654
-
-
0368-2048,. 10.1016/j.elspec.2003.10.001
-
M. Ghaffour, M. Bouslama, Z. Lounis, A. Nouri, C. Jardin, Y. Monteil, and H. Dumont, J. Electron Spectrosc. Relat. Phenom. 0368-2048 134, 81 (2004). 10.1016/j.elspec.2003.10.001
-
(2004)
J. Electron Spectrosc. Relat. Phenom.
, vol.134
, pp. 81
-
-
Ghaffour, M.1
Bouslama, M.2
Lounis, Z.3
Nouri, A.4
Jardin, C.5
Monteil, Y.6
Dumont, H.7
|