Epitaxial MgO as an alternative gate dielectric for SiC transistor applications

Applied Physics Letters

Volumn 92, Issue 23, 2008, Pages

  Posadas, A ^a   Walker, F J ^a   Ahn, C H ^a   Goodrich, T L ^b   Cai, Z ^b   Ziemer, K S ^b  

^a Yale University   (United States)

^b Northeastern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; ELECTRIC PROPERTIES; EPITAXIAL LAYERS; GATES (TRANSISTOR); MOS CAPACITORS; POWER ELECTRONICS; POWER QUALITY; SILICON CARBIDE; STRUCTURAL PROPERTIES; SULFATE MINERALS; TRANSISTORS;

(P ,P ,T) MEASUREMENTS; (PL) PROPERTIES; ALTERNATIVE GATE DIELECTRICS; AMERICAN INSTITUTE OF PHYSICS (AIP); BREAKDOWN FIELDS; CRYSTALLINE LAYERS; ELECTRICAL (ELECTRONIC) PROPERTIES; GATE LEAKAGES; HIGH FIELDS; HIGH QUALITY (HQ); IN ORDER; INTERFACE ROUGHNESS; MOBILITY DEGRADATION; POWER TRANSISTORS; TRANSISTOR APPLICATIONS;

GATE DIELECTRICS;

EID: 45149089900     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2944865     Document Type: Article

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