Magnesium oxide as a candidate high- κ gate dielectric

Applied Physics Letters

Volumn 88, Issue 14, 2006, Pages

  Yan, L ^a   Lopez, C M ^a   Shrestha, R P ^a   Irene, E A ^a   Suvorova, A A ^b   Saunders, M ^b  

^a University of North Carolina at Chapel Hill   (United States)

^b UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACE TRAP DENSITIES; SPECTROSCOPIC ELLIPSOMETRY;

AMORPHOUS MATERIALS; INTERFACES (MATERIALS); MAGNESIA; PERMITTIVITY; SPECTROSCOPIC ANALYSIS; SPUTTERING; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

DIELECTRIC MATERIALS;

EID: 33646707862     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2191419     Document Type: Article

References (6)

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2. Y. Gao, A. H. Mueller, E. A. Irene, O. Auciello, A. R. Krauss, and J. A. Schultz, J. Vac. Sci. Technol. A 17, 1880 (1999).
3. A. H. Mueller, N. A. Suvorova, E. A. Irene, O. Auciello, and J. A. Schultz, Appl. Phys. Lett. 80, 3796 (2002).
4. N. A. Suvorova, C. M. Lopez, E. A. Irene, A. A. Suvorova, and M. Saunders, J. Appl. Phys. 95, 2672 (2004).
5. D. Franta and I. Ohlidal, Surf. Interface Anal. 30, 574 (2000).
6. D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 1990).