Characterization and Optimization of Atomic Hydrogen Cleaning of InP Surface for Selective Molecular Beam Epitaxial Growth of InGaAs Quantum Structure Arrays

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 3 B, 2001, Pages 1874-1877

  Muranaka, Tsutomu ^a   Jiang, Chao ^a   Ito, Akira ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Atomic hydrogen cleaning; in situ XPS; InGaAs quantum structure; Selective MBE; Surface stoichiometry

Indexed keywords

HYDROGEN; MOLECULAR BEAM EPITAXY; OPTIMIZATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC HYDROGEN CLEANING; QUANTUM STRUCTURE ARRAYS;

QUANTUM ELECTRONICS;

EID: 0035267307     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.1874     Document Type: Article

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