An atomic force microscopy study of the surface morphology of InP/GaAs heteroepitaxial layers subjected to rapid thermal annealing

Journal of Applied Physics

Volumn 83, Issue 1, 1998, Pages 246-249

  Riesz, Ferenc ^a,b   Vignali, C ^c   Pelosi, C ^b   Rakennus, K ^d   Hakkarainen, T ^d,e  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b CNR   (Italy)

^c UNIVERSITY OF PARMA   (Italy)

^d TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^e VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SUBSTRATES; SURFACES;

HETEROEPITAXIAL LAYERS;

ATOMIC FORCE MICROSCOPY;

EID: 0031646466     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366733     Document Type: Article

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