Inversion-type InP MOSFETs with EOT of 21 Å using atomic layer deposited Al2 O3 gate dielectric

Electrochemical and Solid-State Letters

Volumn 11, Issue 8, 2008, Pages

  Zhao, Han ^a   Shahrjerdi, Davood ^a   Zhu, Feng ^a   Kim, Hyoung Sub ^a   Ok, Injo ^a   Zhang, Manhong ^a   Yum, Jung Hwan ^a   Banerjee, Sanjay K ^a,b   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

^b ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; ATOMS; AUGER ELECTRON SPECTROSCOPY; CHARGED PARTICLES; DIELECTRIC MATERIALS; ELECTRON MICROSCOPES; ELECTRON MICROSCOPY; ELECTRON MOBILITY; ELECTRON OPTICS; ELECTRONS; EMISSION SPECTROSCOPY; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); IMAGING TECHNIQUES; INDUSTRIAL MANAGEMENT; MEASUREMENTS; MICROSCOPIC EXAMINATION; MOLECULAR BEAM EPITAXY; MULTITASKING; OZONE WATER TREATMENT; PHOTOACOUSTIC EFFECT; TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY; X RAY ANALYSIS; X RAY SPECTROSCOPY;

(E ,3E) PROCESS; (P ,P ,T) MEASUREMENTS; ATOMIC LAYER DEPOSITED (ALD); DRIVE CURRENTS; EFFECTIVE ELECTRON MOBILITY; ELECTRICAL STRESSING; ELECTROCHEMICAL SOCIETY (ECS); EQUIVALENT OXIDE THICKNESS (EOT); EXTRINSIC TRANSCONDUCTANCE; GA TE LENGTHS; GATE-LAST; HIGH PERFORMANCE; HIGH QUALITY (HQ); INP(411) SUBSTRATES; METAL-OXIDE SEMICONDUCTOR (MOS); MOSFETS; N CHANNEL; PULSE MEASUREMENTS; SUBTHRESHOLD SWING (SS); THERMAL STABILITY; TRANSISTOR PERFORMANCE; X RAY PHOTOEMISSION SPECTROSCOPY (XPS);

MOSFET DEVICES;

EID: 45249123647     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2938728     Document Type: Article

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