In situ infrared characterisation of the interfacial oxide during the anodic dissolution of a silicon electrode in fluoride electrolytes

Surface Science

Volumn 365, Issue 1, 1996, Pages 1-14

  Da Fonseca, C ^a   Ozanam, F ^a   Chazalviel, J N ^a  

^a ECOLE POLYTECHNIQUE   (France)

Author keywords

Amorphous thin films; Electrochemical methods; Infrared absorption spectroscopy; Oxidation; Semiconductor electrolyte interfaces; Silicon; Silicon oxides

Indexed keywords

ABSORPTION; AMORPHOUS FILMS; ANODIC POLARIZATION; BAND STRUCTURE; CHARACTERIZATION; COMPOSITION; ELECTROLYTES; FLUORINE COMPOUNDS; INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); OXIDATION; SEMICONDUCTING SILICON;

ABSORPTION BAND; ANODIC DISSOLUTION; FLUORIDE ELECTROLYTES; INFRARED ABSORPTION SPECTROSCOPY; INTERFACIAL OXIDE; SEMICONDUCTOR ELECTROLYTE INTERFACES; SILICON ELECTRODE;

OXIDES;

EID: 0030242628     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)80111-7     Document Type: Article

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