Capacitance and conductance characterization of ferrocene-containing self-assembled monolayers on silicon surfaces for memory applications

Applied Physics Letters

Volumn 81, Issue 8, 2002, Pages 1494-1496

  Li, Qiliang ^a   Mathur, Guru ^a   Homsi, Mais ^a   Surthi, Shyam ^a   Misra, Veena ^a   Malinovskii, Vladimir ^b   Schweikart, Karl Heinz ^b   Yu, Lianhe ^b   Lindsey, Jonathan S ^b   Liu, Zhiming ^c   Dabke, Rajeev B ^c   Yasseri, Amir ^c   Bocian, David F ^c   Kuhr, Werner G ^c  

^a North Carolina State University   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTANCE PEAKS; CONDUCTANCE TECHNIQUES; DISCRETE LEVELS; ELECTRONIC DEVICE; FERROCENES; HYBRID DEVICES; LOW-POWER OPERATION; MEMORY APPLICATIONS; POTENTIAL APPLICATIONS; REDOX-ACTIVE; SILICON SURFACES;

CAPACITANCE; ELECTROLYTIC CAPACITORS; IRON COMPOUNDS; ORGANOMETALLICS;

SELF ASSEMBLED MONOLAYERS;

EID: 79955982408     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1500781     Document Type: Article

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