Interface properties and passivation of p-Si(1 1 1) surfaces by electrochemical organic layer deposition

Materials Science and Engineering: B

Volumn 134, Issue 2-3 SPEC. ISS., 2006, Pages 273-276

  Guell A G ^a   Roodenko, K ^b   Yang, F ^c   Hinrichs, K ^b   Gensch, M ^b   Sanz, F ^a   Rappich, J ^c  

^a UNIVERSITY OF BARCELONA   (Spain)

^b ISAS INSTITUTE FOR ANALYTICAL SCIENCES   (Germany)

^c HAHN MEITNER INSTITUT   (Germany)

Author keywords

Electrochemical deposition; Infrared Spectroscopic ellipsometry; Organic layer; Passivation; Photoluminescence; Photovoltage

Indexed keywords

CRYSTAL DEFECTS; ELECTROCHEMICAL CORROSION; GRAFTING (CHEMICAL); OXIDATION; PASSIVATION; SILICON; SURFACE PROPERTIES;

ELECTROCHEMICAL DEPOSITION; ELECTROCHEMICAL ORGANIC LAYER DEPOSITION; INFRARED ELLIPSOMETRIC SPECTROSCOPY; NITROBENZENE; ORGANIC LAYER; PHOTOVOLTAGE;

LAYERED MANUFACTURING;

EID: 33750314731     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2006.07.005     Document Type: Article

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