Water exclusion at the nanometer scale provides long-term passivation of silicon (111) grafted with alkyl monolayers

Journal of Physical Chemistry B

Volumn 110, Issue 11, 2006, Pages 5576-5585

  Gorostiza, P ^a,d   Henry De Villeneuve, C ^a   Sun, Q Y ^a,e   Sanz, F ^b   Wallart, X ^c   Boukherroub, R ^c   Allongue, P ^a  

^a LABORATOIRE DE PHYSIQUE DE LA MATIÈRE CONDENSÉE   (France)

^b UNIVERSITY OF BARCELONA   (Spain)

^c INSTITUT D ELECTRONIQUE   (France)

^d UNIVERSITY OF CALIFORNIA   (United States)

^e LANZHOU UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; GRAFTING (CHEMICAL); MONOLAYERS; PASSIVATION; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTROCHEMICAL CAPACITANCE; ENERGY DIAGRAM; MONOLAYER SURFACE COVERAGE;

SILICON;

EID: 33645679211     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp054825c     Document Type: Article

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