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Volumn 524-525, Issue , 2002, Pages 120-126

Surface dipole formation and non-radiative recombination at p-Si(111) surfaces during electrochemical deposition of organic layers

(3) Hartig, P a Dittrich, T H b Rappich, J a

a HAHN MEITNER INSTITUT (Germany)

b TECHNICAL UNIVERSITY OF MUNICH (Germany)

Author keywords

Diazonium compounds; Electrochemical grafting; Si; Surface dipole; Surface recombination

Indexed keywords

CHEMICAL BONDS; ELECTRODEPOSITION; GRAFTING (CHEMICAL); INTERFACES (MATERIALS); ORGANIC COMPOUNDS; PHOTOLUMINESCENCE; PHOTOVOLTAIC EFFECTS; REACTION KINETICS; SILICON; SURFACE CHEMISTRY;

SURFACE RECOMBINATION;

ELECTROCHEMISTRY;

EID: 0037012633 PISSN: 00220728 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0728(02)00764-7 Document Type: Article

Times cited : (64)

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