Photoluminescence characterization of non-radiative defect density on silicon surfaces and interfaces at room temperature

Thin Solid Films

Volumn 364, Issue 1, 2000, Pages 196-199

  Timoshenko, V Yu ^a,b   Petrenko, A B ^a   Dittrich, Th ^b   Fussel W ^c   Rappich, J ^c  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^c HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL DEFECTS; EXCIMER LASERS; GAS LASERS; LASER PULSES; PHOTOLUMINESCENCE;

XENON CHLORIDE LASERS;

SILICON WAFERS;

EID: 0033885362     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00955-4     Document Type: Article

References (6)

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