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Volumn 503, Issue 1, 2010, Pages 186-191

Electrical properties and interfacial reactions of rapidly annealed Ni/Ru Schottky rectifiers on n-type GaN

(3) Reddy, M Siva Pratap a Reddy, V Rajagopal a Choi, Chel Jong b

b Chonbuk National University (South Korea)

Author keywords

Atomic force microscopy; Electrical and structural properties; N type GaN; Schottky rectifiers; Secondary ion mass spectrometer; X ray diffraction

Indexed keywords

ANNEALING TEMPERATURES; BARRIER HEIGHTS; CAPACITANCE VOLTAGE; CURRENT VOLTAGE; ELECTRICAL AND STRUCTURAL PROPERTIES; ELECTRICAL PROPERTY; ELEVATED TEMPERATURE; HIGH-TEMPERATURE DEVICES; INTERFACIAL REACTIONS; ROOT MEAN SQUARE ROUGHNESS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; SCHOTTKY DIODES; SCHOTTKY RECTIFIERS; SECONDARY ION MASS SPECTROMETER; SECONDARY ION MASS SPECTROMETERS; XRD;

ANNEALING; ATOMIC FORCE MICROSCOPY; ATOMS; ELECTRIC PROPERTIES; GALLIUM ALLOYS; GALLIUM NITRIDE; IONS; MASS SPECTROMETERS; PHASE INTERFACES; SCHOTTKY BARRIER DIODES; SECONDARY EMISSION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR METAL BOUNDARIES; SPACECRAFT INSTRUMENTS; SPECTROMETRY; STRUCTURAL PROPERTIES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAYS;

ELECTRIC RECTIFIERS;

EID: 77955306527 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2010.04.230 Document Type: Article

Times cited : (18)

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