Structural and electrical properties of rapidly annealed Ni/Mo Schottky barriers on n-type GaN

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 3, 2010, Pages 753-759

  Jyothi, I ^a   Reddy, V Rajagopal ^a   Pratap Reddy, M Siva ^a   Choi, Chel Jong ^b   Bae, Jong Seong ^c  

^a SRI VENKATESWARA UNIVERSITY   (India)

^b Chonbuk National University   (South Korea)

^c Korea Basic Science Institute (KBSI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CAPACITANCE VOLTAGE; CURRENT VOLTAGE; ELECTRICAL AND STRUCTURAL PROPERTIES; ELECTRICAL CHARACTERISTIC; HIGH QUALITY; HIGH-TEMPERATURE DEVICES; IDEALITY FACTORS; METALLIZATIONS; NITROGEN ATMOSPHERES; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS; SECONDARY ION MASS SPECTROMETERS; STRUCTURAL AND ELECTRICAL PROPERTIES; THERMAL ANNEALING EFFECTS; THERMAL-ANNEALING; XRD ANALYSIS;

ELECTRIC PROPERTIES; GALLIUM ALLOYS; GALLIUM NITRIDE; PHASE INTERFACES; SCHOTTKY BARRIER DIODES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR METAL BOUNDARIES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

ANNEALING;

EID: 77950979440     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200925308     Document Type: Article

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