The effect of annealing temperature on electrical and structural properties of Rh/Au Schottky contacts to n-type GaN

Semiconductor Science and Technology

Volumn 21, Issue 12, 2006, Pages 1753-1757

  Reddy, V Rajagopal ^a   Reddy, N Ramesha ^a   Choi, Chel Jong ^b  

^a UNIVERSITY OF MYSORE   (India)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CAPACITANCE; ELECTRIC PROPERTIES; GOLD; RHODIUM; X RAY DIFFRACTION;

GALLIDE PHASES; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS;

SCHOTTKY BARRIER DIODES;

EID: 33846860624     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/12/044     Document Type: Article

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