GaN Schottky barrier photodiode on Si (1 1 1) with low-temperature-grown cap layer

Journal of Alloys and Compounds

Volumn 481, Issue 1-2, 2009, Pages

  Chuah, L S ^a   Hassan, Z ^a   Abu Hassan, H ^a   Ahmed, N M ^b  

^a SCHOOL OF PHYSICS   (Malaysia)

^b UNIVERSITY MALAYSIA PERLIS   (Malaysia)

Author keywords

AlN; GaN; Photodiode; Schottky barrier height; Thermal annealing

Indexed keywords

EID: 67649252103     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.02.151     Document Type: Letter

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