Complete HVPE experimental investigations: Cartography of SAG GaN towards quasi-substrates or nanostructures

Journal of Crystal Growth

Volumn 312, Issue 12-13, 2010, Pages 1899-1907

  Chelda Gourmala, O ^a,b   Trassoudaine, A ^a,b   Andr, Y ^a,b   Bouchoule, S ^b   Gil, E ^a,b   Tourret, J ^a,b   Castelluci, D ^a,b   Cadoret, R ^a,b  

^a UNIVERSITÉ CLERMONT AUVERGNE   (France)

^b CNRS   (France)

Author keywords

A1. Crystal morphology; A3. HVPE; A3. Selective epitaxy; B1. GaN

Indexed keywords

C-PLANE SAPPHIRE; CONTROLLED MORPHOLOGY; CRYSTAL MORPHOLOGIES; CRYSTALLOGRAPHIC DIRECTIONS; EXPERIMENTAL INVESTIGATIONS; GROWTH MORPHOLOGY; HYDRIDE VAPOUR PHASE EPITAXIES; METAL-ORGANIC VAPOUR PHASE EPITAXY; MOVPE; PLANE SAPPHIRE; SELECTIVE AREA GROWTH; SELECTIVE EPITAXY; SEM; V/III RATIO;

CRYSTAL GROWTH; GALLIUM NITRIDE; MAPPING; MAPS; MORPHOLOGY; NANOSTRUCTURES; ORGANOMETALLICS; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; VAPOR PHASE EPITAXY;

GALLIUM ALLOYS;

EID: 77955230885     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.02.020     Document Type: Article

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