Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers

Journal of Crystal Growth

Volumn 306, Issue 1, 2007, Pages 86-93

  Andre, Yamina ^a   Trassoudaine, Agnès ^a   Tourret, Julie ^a   Cadoret, R ^a   Gil, Evelyne ^a   Castelluci, Dominique ^a   Aoude, Ouloum ^a   Disseix, Pierre ^a  

^a UNIVERSITÉ BLAISE PASCAL   (France)

Author keywords

A1. Low dislocation density; A3. HVPE; A3. Thick layers; B2. GaN

Indexed keywords

LOW DISLOCATION DENSITY; THICK LAYERS;

DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; HYDRIDES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY; X RAY DIFFRACTION ANALYSIS;

THICK FILMS;

EID: 34447513950     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.12.081     Document Type: Article

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