Influence of growth parameters on crack density in thick epitaxially lateral overgrown GaN layers by hydride vapor phase epitaxy

Journal of Crystal Growth

Volumn 230, Issue 3-4, 2001, Pages 377-380

  Wang, Chengxin ^a   Anthony Chung, Hinyiu ^a   Seyboth, Matthias ^a   Kamp, Markus ^a   Joachim Ebeling, Karl ^a   Beccard, Rainer ^b   Heuken, Michael ^b  

^a UNIVERSITY OF ULM   (Germany)

^b AIXTRON AG   (Germany)

Author keywords

A3. Epitaxially lateral overgrown layers; A3. Hydride vapor phase epitaxy; B1. Gallium compounds; B1. Nitrides

Indexed keywords

CRACKS; FRACTURE MECHANICS; GALLIUM NITRIDE; HYDRIDES; PRESSURE EFFECTS; SILICA; STRESS RELAXATION; SUBSTRATES; THERMAL EFFECTS; THICK FILMS;

HYDRIDE VAPOR PHASE EPITAXY;

VAPOR PHASE EPITAXY;

EID: 0035451227     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01298-2     Document Type: Article

References (11)