Temperature influence on the growth of gallium nitride by HVPE in a mixed H2/N2 carrier gas

Journal of Crystal Growth

Volumn 260, Issue 1-2, 2004, Pages 7-12

  Trassoudaine, Agnès ^a   Cadoret, Robert ^a   Gil Lafon, Evelyne ^a  

^a UNIVERSITÉ CLERMONT AUVERGNE   (France)

Author keywords

A1. Kinetic modelling; A3. Hydride vapor phase epitaxy; B1. Nitrides

Indexed keywords

ACTIVATION ENERGY; DESORPTION; ETCHING; GROWTH KINETICS;

CARRIER GASES;

GALLIUM NITRIDE;

EID: 0242691947     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.07.027     Document Type: Article

References (19)

1. Usui A., Sunakawa H., Sakai A., Yamaguchi A. Jpn. J. Appl. Phys. 36:1997;L899.
2. Hiramatsu K., Matsushima H., Shibata T., Sawaki N., Tadatomo K., Okagawa H., Ohuchi Y., Honda Y., Matsue T. Mater. Res. Sos. Symp. Proc. 482:1998;257.
3. Shibata T., Sone H., Yahashi K., Yamaguchi M., Hiramatsu K., Sawaki N., Itoh N. J. Crystal Growth. 189/190:1998;67.
4. Nataf G., Beaumont B., Bouillé A., Haffouz S., Vaille M., Gibart P. J. Crystal Growth. 192:1998;73.
5. J.S. Speck, B. Heying, C. Elsass, P. Fini, D. Green, E. Haus, C. Poblenz, Y. Smorchkova, UK Mishra, S.P. DenBaars, in: Proceedings of the Materials Research Society Symposium, Boston, 2000, G7.4.
6. Wong W.S., Sands T., Cheung N.W. Appl. Phys. Lett. 72:1998;588.
7. Kelly M.K., Vaudo R.P., Phanse V.M., Görgens L., Ambacher O., Stutzmann M. Jpn. J. Appl. Phys. 38:1999;L217.
8. R.P. Vaudo, G.R. Brandes, J.S. Flynn, X. Xu, M.F. Chriss, C.S. Christos, D.M. Keogh, F.D. Tamweber, in: Proceedings of the IWN2000 Conference, Nagoya, p. 15.
9. S.S. Park, I.W. Park, S.H. Choh, in: Proceedings of the IWN2000 Conference, Nagoya, p. 60.
10. Kim H.M., Oh J.E., Kang T.W. Mater. Lett. 47:2001;276.
11. Trassoudaine A., Aujol E., Disseix P., Castelluci D., Cadoret R. Phys. Stat. Sol. A. 176:1999;425.
12. Aujol E., Trassoudaine A., Castelluci D., Cadoret R. Mater. Sci. Eng. B82:2001;65.
13. Aujol E., Trassoudaine A., Siozade L., Pimpinelli A., Cadoret R. J. Crystal Growth. 230:2001;372.
14. Cadoret R. J. Crystal Growth. 205:1999;123.
15. Cadoret R., Gil-Lafon E. J. Phys. I France. 7:1997;889.
16. Seifert W., Fitzl G., Butter E. J. Crystal Growth. 52:1981;257.
17. A. Trassoudaine, E. Aujol, R. Cadoret, T. Paskova, B. Monemar, MRS Symposium Proceedings, Vol. 639, Fall Meeting, Boston, 2000, G3.2.1.
18. A. Trassoudaine, R. Cadoret, E. Aujol, Nitride Semiconductors, Handbook on Materials and Devices, Wiley-VCH, 1981, p. 193.
19. Cadoret R., Trassoudaine A. J. Phys.: Condens. Matter. 13:2001;6893.