A complete crystallographic study of GaN epitaxial morphologies in selective area growth by hydride vapour phase epitaxy (SAG-HVPE)

Journal of Crystal Growth

Volumn 311, Issue 6, 2009, Pages 1460-1465

  Tourret, J ^a   Gourmala, O ^a   Andre Y ^a   Trassoudaine, A ^a   Gil, E ^a   Castelluci, D ^a   Cadoret, R ^a  

^a CNRS   (France)

Author keywords

A1. Crystal morphology; A3. HVPE; A3. Selective epitaxy; B1. GaN

Indexed keywords

CORUNDUM; CRYSTAL GROWTH; EPITAXIAL GROWTH; GALLIUM NITRIDE; GRAIN BOUNDARIES; MORPHOLOGY; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SUBSTRATES; SULFUR COMPOUNDS; VAPOR PHASE EPITAXY;

A1. CRYSTAL MORPHOLOGY; A3. HVPE; A3. SELECTIVE EPITAXY; B1. GAN; CONDENSATION SURFACES; CRYSTAL GROWTH MECHANISMS; CRYSTALLOGRAPHIC STUDIES; EXPERIMENTAL CONDITIONS; GAN LAYERS; GAN/SAPPHIRE; GROWTH MORPHOLOGIES; GROWTH STRUCTURES; HYDRIDE VAPOUR PHASE EPITAXIES; PARALLEL STRIPES; SELECTIVE AREA GROWTHS; SEM;

GALLIUM ALLOYS;

EID: 62549163390     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.082     Document Type: Article

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